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| LED - Chip Preliminary Radiation Infrared Type DDH 10.04.2007 Technology AlGaAs/AlGaAs ELC-840-25-1 rev. 03/06 Electrodes N (cathode) up 325 280 240 typ. dimensions (m) typ. thickness 150 (25) m cathode gold alloy, 1.5 m anode gold alloy, 0.5 m, dotted, 25% covered LED-04 Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Radiant power* Peak wavelength Spectral bandwidth at 50% Switching time IF = 20 mA IR = 100 A IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA Symbol Min Typ Max Unit VF VR e p 0.5 tr, tf 5 2.0 830 1.5 1.7 V V 3.0 840 35 40 850 mW nm nm ns *Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type ELC-840-25-1 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
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